Products
PRODUCT51 Inner core FLASH
HS52F003N is a 1T speed 51 core MCU manufactured by low consumption and high speed CMOS process. It has 16kx8-bit FLASH 、256 Byte EEPROM、256Byte+512Byte SRAM built in,it also contains a 6-channel 12-bit PWM and integrated a 12-bit SAR ADC.
Product overview
HS52F003N is a 1T speed 51 core MCU manufactured by low consumption and high speed CMOS process. It has 16kx8-bit FLASH 、256 Byte EEPROM、256Byte+512Byte SRAM built in,it also contains a 6-channel 12-bit PWM and integrated a 12-bit SAR ADC.
Product details
◆ 1T8051 instructions, 4 levels Interrupt priority setting, double data pointer(DPTRS).
◆ 16K×8-bit program storage,flexible code protection,repeat write 10,000 times.
◆ 256 x 8-bit EEPROM data store,repeat write 100,000 times, More than 10 years of storage life.
◆ 256× 8-bit IRAM+ 512× 8 bit XRAM.
◆ T0 and T1 timer compatible with T0 and T1 timer/counter of traditional 8051.
◆ T2 timer compatible with mainstream manufacturers of T2 timer/counter.
◆ One enhanced EUART.
◆ One traditional 8051 compatible UART.
◆ Four groups of functional IO interfaces, a total of 18 IO, driving up to 100mA.
◆ Inline debugging function, online simulation can be performed, double-line burning and simulation interface.
◆ Multiple sets of interrupt,T0/T1/T2,TI/RI,INT0/INT1/INT2/INT3/ADC/PWM/SPI/BTM,4 levels Interrupt priority setting.
◆ Built-in 16MHz±1.5% high-speed oscillator,Built-in 128Khz±7% low speed crystal oscillator.
◆ Supinterface for ISP and IAP modes.
◆ Built-in level 6 LVR.
◆ SPI communication interface.
◆ WDT allows to set the frequency divider and clock source.
◆ 6-channel 12bit PWM,It can be divided into three groups of complementary dead zone PWM.
◆ 12-channel 12bit ADC,can built-in 1.5V, 2V, 3V reference/measurable VDD.
◆ Power saving mode IDLE, can be accidentally interrupted wake up.
◆ Sleep mode, external interrupt, interface change interrupt, BTM overflow wake up.
◆ Software can set the frequency division and clock source .
◆ Wide operating voltage range:2.2V~5.5V.
◆ operating temperature:-40~105℃.
◆ ESD:6000V;Latch up:300mA.
◆ Based on KEILTM development environment.