Products
PRODUCTLearning IC
| Part No. | VDD | Inbuilt RC | ROM | RAM | I/O | E2 | Keys | Package | |||||||||||||||||||||||||||||||||||||||||
| HS23P36E | 2.2~3.6V | 8MHz±1.0% | 8K*16 | 512 | 14 | 1024*8 | T/M-KEY | SOP16 | |||||||||||||||||||||||||||||||||||||||||
PRODUCT OVERVIEWHS23P36E product is 8-bit MCU by CMOS process of low power-consumption and high speed which include 8K*16 bit OTP-ROM on-chip ,built-in infrared learning circuit . FEATURES◆ Wide operating voltage range: 2.2V~3.6V (8M 2 frequency division). ◆ Operating temperature range: -20℃~80℃ ◆ Operating frequency range: Built-in RC 8MHz±2% System clock source :Fosc/2, Fosc/4, Fosc/8, Fosc/16 ◆ 8K*16-bit ROM on-chip ◆ Direct and indirect addressing ◆ 1 16-bit timer TC0, 8-bit effective for PWM and Buzzer. ◆ 1 16-bit basic timer T1 ◆ Built-in power-on reset time (PWRT) ◆ Built-in watch-dog (WDT) ◆ Built-in adjustable oscillator (IRC 8MHz) ◆ ONE safety bit in code-register protect program not be read ◆ 512*8 bit SRAM ◆ Three sets of standard Bi-directional I/O ports. ◆ Level 8 stack for subroutine nesting ◆ Energy saving mode (SLEEP mode) ◆ 6 available interrupts: TC0, T0, external interrupt, P0_P1 port change interrupt, P54 port change interrupt, P50 port change interrupt ◆ Built-in infrared emission amplifier drive circuit ◆ Built-in power-on reset circuit (POR) ◆ Built-in low-voltage detection (LVD) ,brown-out reset (BOR) More |
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| HS23P46E | 2.2~3.6V | 8MHz±1.0% | 16K*16 | 512 | 14 | 1024*8 | T/M-KEY | SOP16 | |||||||||||||||||||||||||||||||||||||||||
PRODUCT OVERVIEWHS23P46E product is 8-bit MCU by CMOS process of low power-consumption and high speed which include 16K*16 bit OTP-ROM on-chip , 1K*8-bit E2PROM and built-in infrared learning circuit .
FEATURES◆ Wide operating voltage range: 2.0V~3.6V (8M 2 frequency division). ◆ Operating temperature range: -20℃~80℃ ◆ Operating frequency range: Built-in RC 8MHz±1.5% System clock source :Fosc/2, Fosc/4, Fosc/8, Fosc/16 ◆ 1 16K*16-bit ROM on-chip ◆ Direct and indirect addressing ◆ 1 16-bit timer TC0, 8-bit effective for PWM and Buzzer. ◆ TC0：external event counter/PWM0/ Buzzer output. ◆ Three sets of standard Bi-directional I/O ports. ◆ Level 8 stack for subroutine nesting ◆ 3 interrupts available ◆ 2 internal interrupts：TC0, T0 ◆ 2 external interrupts：INT0，P0_P1，P5.0，P5.4 ◆ 1 16-bit basic timer ◆ Built-in infrared emission amplifier drive circuit ◆ Built-in power-on reset circuit (POR) ◆ Built-in low-voltage detection (LVD) ,brown-out reset (BOR) More |
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| HS23P56E | 2.2~3.6V | 8MHz±1.0% | 32K*16 | 512 | 14 | 1024*8 | T/M-KEY | SOP16 | |||||||||||||||||||||||||||||||||||||||||
PRODUCT OVERVIEWHS23P56E product is 8-bit MCU by CMOS process of low power-consumption and high speed which include 32K*16 bit OTP-ROM on-chip ,built-in infrared learning circuit .
FEATURES◆ Wide operating voltage range: 2.2V~3.6V (8M 2 frequency division). ◆ Operating temperature range: -20℃~80℃ ◆ Operating frequency range: Built-in RC 8MHz±2% System clock source :Fosc/2, Fosc/4, Fosc/8, Fosc/16 ◆ 32K*16-bit ROM on-chip ◆ Direct and indirect addressing ◆ 1 16-bit timer TC0, 8-bit effective for PWM and Buzzer. ◆ 1 16-bit basic timer T1 ◆ Built-in power-on reset time (PWRT) ◆ Built-in watch-dog (WDT) ◆ Built-in adjustable oscillator (IRC 8MHz) ◆ ONE safety bit in code-register protect program not be read ◆ 512*8 bit SRAM ◆ Three sets of standard Bi-directional I/O ports. ◆ Level 8 stack for subroutine nesting ◆ Energy saving mode (SLEEP mode) ◆ 6 available interrupts: TC0, T0, external interrupt, P0_P1 port change interrupt, P54 port change interrupt, P50 port change interrupt ◆ Built-in infrared emission amplifier drive circuit ◆ Built-in power-on reset circuit (POR) ◆ Built-in low-voltage detection (LVD) ,brown-out reset (BOR) More |
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| HS23P4060 | 2.2~3.6V | 8MHz±1.0% | 4K*16 | 512 | 14 | 1024*8 | T/M-KEY | SOP16 | |||||||||||||||||||||||||||||||||||||||||
PRODUCT OVERVIEWHS23P4060 product is 8-bit MCU by CMOS process of low power-consumption and high speed which include 4K*16 bit OTP-ROM on-chip , 1K*8-bit MTP and built-in infrared learning circuit .
FEATURES◆ Wide operating voltage range: 2.2V~3.6V (8M 2 frequency division), MTP programming and erasing is the voltage above 2.5v. ◆ Operating temperature range: -20℃~80℃ ◆ Operating frequency range: Built-in RC 8MHz±2% System clock source :Fosc/2, Fosc/4, Fosc/8, Fosc/16, Fosc/32 ◆ 4K*16-bit ROM on-chip ◆ 1K*8-bit MTP on-chip ◆ Direct and indirect addressing ◆ 1 16-bit timer TC0, 8-bit effective for PWM and Buzzer. ◆ 1 16-bit basic timer T1 ◆ Built-in power-on reset time (PWRT) ◆ Built-in watch-dog (WDT) ◆ Built-in adjustable oscillator (IRC 8MHz) ◆ ONE safety bit in code-register protect program not be read ◆ 512*8 bit SRAM ◆ Three sets of standard Bi-directional I/O ports. ◆ Level 8 stack for subroutine nesting ◆ Energy saving mode (SLEEP mode) ◆ 6 available interrupts: TC0, T0, external interrupt, P0_P1 port change interrupt, P54 port change interrupt, P50 port change interrupt ◆ Built-in infrared emission amplifier drive circuit ◆ Built-in power-on reset circuit (POR) ◆ Built-in low-voltage detection (LVD) ,brown-out reset (BOR) More |
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